Download e-book for iPad: Advanced Power MOSFET Concepts by B. Jayant Baliga
By B. Jayant Baliga
"Advanced energy MOSFET innovations" offers an in-depth remedy of the physics of operation of complicated energy MOSFETs. Analytical types for explaining the operation of all of the complicated strength MOSFETs are constructed and defined. the result of numerical simulations are supplied to offer extra perception into the gadget physics and validate the analytical types. the result of two-dimensional simulations also are given, so as to corroborate the analytical versions and provides additional perception into the machine operation. This quantity additionally: -Discusses units which could have an important impression on bettering the potency of the voltage-regulator-modules used to convey energy to microprocessors and pics chips in laptops and servers -Covers purposes in all decrease voltage circuits, particularly the car electronics region comprises numerical simulation examples to give an explanation for the working physics and validate the versions - bargains huge insurance of the function of silicon carbide within the layout and constitution of energy rectifiers "Advanced strength MOSFET options" is a must-read for researchers and practising engineers within the energy equipment industry.
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Additional resources for Advanced Power MOSFET Concepts
For the allowable maximum P-base doping concentration, it is desirable to make the depth of the P-base region as small as possible to reduce the channel length in the power MOSFET structure. However, if the junction depth of the P-base region is made too small, the depletion region in the P-base region will reach through to the N+ source region leading to a reduced breakdown voltage. In the power D-MOSFET structure, the gate region is not screened from the drain bias due to cylindrical shape of the planar junctions.
034 mO cm2. Since the device is constrained by the impact of an 80% reduction of breakdown voltage due to the edge termination, it is worth computing the ideal specific on-resistance for this case for comparison with the device. 8 mm, respectively. 059 mO cm2. It can be observed that the specific on-resistance for the D-MOSFET structure is far greater than these ideal specific on-resistances. 1 Simulation Results The results of two-dimensional numerical simulations on the 30-V power D-MOSFET structure are described here to provide a more detailed understanding of the underlying device physics and operation.
The waveforms for the low-side transistor are a complement of those for the high-side transistor. The efficiency of the sync-buck converter is determined by the on-resistance and switching speed of the two transistors. The low-side MOSFET is also referred to as a synchronous rectifier. The current flow in the low-side MOSFET is in the opposite direction to the normal operation of power MOSFET devices. If the low-side power MOSFET is turned on by the control circuit, the current flow occurs with a voltage drop determined by the on-resistance of the MOSFET structure.
Advanced Power MOSFET Concepts by B. Jayant Baliga